Focus on the 2006 LEOS Graduate Student Fellows
the LEOS Board of Governors focused on encouraging students in their
studies in electrical engineering. They established the LEOS Graduate
Student Fellowship program to provide fellowships to outstanding LEOS
student members pursuing graduate education within the LEOS field of
interest (electro-optics, lasers, photonics, optics or closely related
fields). Applicants are normally in their penultimate year of study
and receive the award for their final year and must be LEOS student
members. Recipients are apportioned geographically in approximate proportion
to the numbers of student members in each of the main geographical regions
(Americas, Europe/Mid-East/Africa, Asia/Pacific). There are 12 Fellows
per year. Each LEOS Graduate Fellow receives $5000 and a travel grant
of up to $2500 to attend the LEOS Annual Meeting to accept their award.
CHREMMOS received the Diploma of Electrical and Computer Engineering
from the Department of Electrical and Computer Engineering at the National
Technical University of Athens (NTUA) in 2002, ranking first among his
colleagues and achieving the highest grade in all Departments of NTUA
for 2002. He has been awarded annual fellowships and distinction awards
from the Greek State Scholarships Foundation and the Greek Technical
Chamber in every year of his undergraduate studies. He is currently
working towards the Ph. D. degree in Electrical and Computer Engineering
at the Microwave and Fiber Optics Laboratory at the NTUA, under the
supervision of Prof. N. Uzunoglu. His work focuses on the rigorous EM
modeling of novel optical and microwave devices, involving the coupling
of optical waveguides with resonant dielectric cavities. He has been
especially involved in the integral equation modeling of “whispering
gallery” resonators, coupled-resonator optical waveguides (CROWs),
photonic crystal fibers and couplers and the study of so far unsolved
EM problems such as the coupling of non-parallel optical fibers.
DENG received the B.Eng. degree in Electronics Engineering
and Information Science from the University of Science and Technology
of China (USTC) in 2002. During his undergraduate study, he participated
in the Undergraduate Research Program of USTC and won the Best R&D
Project Award. He served as a summer intern in the Chinese Academy of
Sciences (CAS) in 2001.
GE was born in 1979 in Suzhou, China. He received the B.S.
and M.S. degrees in Electrical Engineering from Zhejiang University,
Hangzhou, China and University of Central Florida (UCF), Orlando, USA
in 2002 and 2004, respectively.
KALOGERAKIS received his B.E. degree in Electrical and Computer
Engineering from National Technical University of Athens, Greece, in
2001. He received the M.S. degree in Electrical Engineering from Stanford
University, Stanford, CA, in 2003. He is currently working towards the
Ph.D. degree in Electrical Engineering under the supervision of Prof.
Leonid Kazovsky at Stanford University.
KIM received the B.S. degree in electrical engineering from
Seoul National University, Seoul, Korea, in 1999, and the S.M. degree
in electrical engineering and computer science from the Massachusetts
Institute of Technology (MIT), Cambridge, MA in 2004, where he is currently
working toward the Ph.D. degree in the same field.
MI received the B.Sc. degree in Physics from Beijing University,
China in 1997 and the MS degree in Physics from the University of Iowa
in 2001. From 2001 to 2003, he had been with Picometrix, working on
the development of high-speed photoreceivers. In 2003, he started Ph.D.
in Applied Physics at the University of Michigan. His research interests
are in the areas of self-organized nanostructures and their applications
in nanophotonics and nanoelectronics. He has demonstrated the first
semiconductor lasers that exhibit temperature invariant operation, the
first tunnel injection 1.3 µm quantum dot lasers that exhibit
zero a-parameter, the first 1.5 µm metamorphic quantum dot lasers
on GaAs with the lowest threshold current ever reported, and the first
room-temperature InGaAs quantum dot lasers monolithically grown on Si.
He is an author or coauthor of over 50 journal articles and conference
papers. Recently, he has received the Outstanding Student Paper Award
at the 23rd North American Conference on Molecular Beam Epitaxy, the
First Place Best Student Poster Award at the 1st Nano-Optoelectronic
Workshop in Berkeley, the Third Place Best Student Poster Award at the
2nd Nano-Optoelectronic Workshop in Berkeley, and the 2006 IEEE/LEOS
Graduate Student Fellowship Award.
MOKKAPATI was born in Hyderabad, India in 1977. She received
Bachelors degree in Science from Osmania University in 1995 and Masters
degree in Science in1999 and Technology in 2001 from University of Hyderabad,
Hyderabad and Indian Institute of Technology, Kanpur respectively.
AURELIO PADILHA, JR.was born in Socorro, in Sao Paulo State
in Brazil, on February 18, 1980. He received B. S. degrees in Physics
Universidade Estadual de Campinas, in Brazil in 2001. In 2002, he joined
the Ultrafast Phenomena Group at the Physics Institute at Universidade
Estadual de Campinas, where he had been a PhD student until 2006 when
he graduated. During his graduation, Lazaro spent one year as a Visiting
Student at the Nonlinear Optics Group at CREOL at University of Central
Florida, in Orlando, FL. Currently, he is a Research Scientist at this
same group at CREOL. His research work is in the area of linear and
nonlinear optical properties in quantum confined materials, especially
semiconductor quantum dots. Optical properties of semiconductor can
be controlled by controlling the size and size distribution of the quantum
dots. In his PhD he studied the influence of quantum confinement on
the optical properties of semiconductors. He is a member of OSA, SPIE,
PUDO was born in 1980 in Warsaw, Poland. He received the B.Eng
degree in electrical engineering from McGill University, Montreal, Canada
in 2003, and is currently working towards the Ph.D. degree at the same
university under the supervision of Prof. Lawrence Chen. From 2001 till
2003, he was an undergraduate research assistant in the Photonic Systems
Group at McGill, working on novel configurations of multiple-wavelength,
mode-locked fiber lasers as well as on erbium-doped fiber amplifiers.
His research was highlighted in WDM Solutions in June 2002, and a year
later he was the co-recipient of the IEEE Life Member Award for the
best student paper in Eastern Canada. Since 2003, his graduate research
work, supported by the prestigious Natural Sciences and Engineering
Research Council of Canada (NSERC) doctoral scholarship, focuses on
the limitations and applications of the temporal Talbot effect within
the context of pulse repetition rate multiplication. Mr. Pudo was also
granted a Canadian Institute for Photonic Innovations (CIPI) fellowship
to spend 4 months at the Centre for Ultrahigh-bandwidth Devices for
Optical Systems in Sydney, Australia in 2005-2006. During his stay,
he worked on long period gratings and photo-induced effects in chalcogenide
fibers. He has published a dozen journal papers and conference proceeding
articles, and he currently owns one provisional patent. Mr.Pudo is a
student member of IEEE-LEOS and the Optical Society of America.
JOSE VEGAS OLMOS (S’ 04) was born in Barcelona, Spain
in 1978. He received the B.Sc. degree in telecommunications engineering
and the M.Sc. degree in electronics engineering from the Universitat
Politecnica de Catalunya, Barcelona, Spain, in 2001 and 2003, respectively.
He also received the Licenciature in Business Administration from the
Universitat Oberta de Catalunya in 2005.
VUKMIROVIC (S’05) was born in Belgrade, Serbia, in 1980.
He received the B.Sc. degree in physics in 2003, and the B.Sc. degree
in electrical engineering in 2004, both from the University of Belgrade,
Belgrade, Serbia. Since October 2004, he has been pursuing the Ph.D.
degree at the Institute of Microwaves and Photonics, School of Electronic
and Electrical Engineering, University of Leeds, Leeds, U.K., in the
field of theory, design and modeling of quantum-dot intraband optoelectronic
devices. His research interests range from the fundamental aspects of
the electronic, optical and transport properties of quantum nanostructures
to their application in devices such as quantum dot infrared photodetectors,
quantum cascade lasers and optically pumped lasers.
WATTS was born in Yorkshire, United Kingdom in 1970. He obtained
the BSc in Applied Physics from the University of Nottingham, with 1st
class honours, in 1991. From 1991 to 2000, he worked at the GEC-Marconi
Research Centre (Chelmsford, UK) on the development of optical systems
for defence and aerospace applications including diode pumped lasers,
coherent and direct detection LIDAR and adaptive optics. From 2000,
he was senior optical hardware engineer with Nortel Networks (Harlow,
UK and Ottawa, Canada) with responsibility for next generation DWDM
optical multiplexer product development. On leaving Nortel in 2002,
and having a strong interest in signal processing for optical systems,
he decided to pursue academic research in this area. He studied for
the Masters degree in Technologies for Broadband Communications at University
College London (UCL), graduating with Distinction in 2003, with a thesis
on the electronic compensation of fibre chromatic dispersion for optical
single sideband (OSSB) signals. In September 2003, he was awarded a
UK EPSRC (Engineering and Physical Sciences Research Council) PhD scholarship
to continue this research with the Optical Networks Group at UCL.