SiGeSn Infrared Photonics and Quantum Electronics
Journal of Selected Topics in Quantum Electronics
The IEEE Journal of Selected Topics in Quantum Electronics (JSTQE) invites manuscript submissions in SiGeSn Infrared Photonics and Quantum Electronics. The emerging field of SiGeSn semiconductors and topological quantum materials, including those with Pb or C alloying, has opened up new horizons for infrared photonics and quantum electronics devices monolithically integrated on Si platform. They have broad range of applications such as infrared imaging, bio/chemical sensing, light detection and ranging (LIDAR), as well as novel topological quantum devices. This platform will greatly enrich photonic-electronic integration on Si. The IEEE Journal of Selected Topics in Quantum Electronics invites manuscript submissions in the area of SiGeSn Infrared Photonics and Quantum Electronics. The purpose of this issue of JSTQE is to highlight the recent progress and trends in developing cutting-edge SiGeSn technologies, from fundamental studies on the electronic structures to demonstration of infrared photonic/quantum electronic devices.